SSC JE Electrical Important MCQ Part 26
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SSC JE Electrical Important MCQ PDF Part 26
1.Find voltage vo in the circuit shown in Fig.
A.4 V
B.24 V
C.28 V
D.6 V
Answer : B
2.The current through an element is shown in Fig. What is the total charge that passed through the element at t=3 s
A.10 C
B.22.5C
C.30 C
D.120 mC
Answer : B
SSC JE Electrical Important MCQ Part 26
3.The charge entering a certain element is shown in Fig.The value of current at t = 6 ms is
A.30 A
B.0 A
C.-15 A
D.15 A
Answer : B
Details Solution Available In Electrical One Year Test Series Pass
4.A lightning bolt with 10 kA strikes an object for 15 s. How much charge is deposited on the object
A.120 mC
B.120 C
C.12 mC
D.12 C
Answer : A
5.Figure shows a circuit with five elements. If P1=-205 W, P2=60 W, P4=45 W, P5= 30 W,What is the power received or delivered by element 3
A.70 W
B.-70 W
C.30 W
D.-30 W
Answer : B
SSC JE Electrical Important MCQ Part 26
6.A network with b branches, n nodes, and l independent loops will satisfy the which of following fundamental theorem of network topology
A.b = l + n – 1
B.b = l + n + 1
C.b = l – n – 1
D.b =- l + n + 1
Answer : A
7.Which of following equation will be satisfy KVL of circuit given in figure
A.v2 + v3 + v5 = v1 + v4
B.v2 + v3 + v5 = v1 – v4
C.v2 + v3 – v5 = v1 + v4
D.v2 – v3 – v5 = v1 + v4
Answer : A
8.Find Req for the circuit shown in Fig
A.14.4 Ω
B.2.4 Ω
C.10.4 Ω
D.12.4 Ω
Answer : A
SSC JE Electrical Important MCQ Part 26
Details Solution Available In Electrical One Year Test Series Pass
9.In the circuit of Fig. If R3 decrease then
(a) current through R3 decrease
(b) voltage across R3 decrease
(c) voltage across R1 decrease
(d) power dissipated in R2 decrease
Which is true
A.a,d
B.b,d
C.a,b,d
D.a,b,c,d
Answer : B
SSC JE Electrical Important MCQ Part 26
10.A network has 12 branches and 8 independent loops. How many nodes are there in the network
A.19
B.17
C.5
D.4
Answer : C
11.Value of current i in Fig. when the switch is in position 1.
A.25 mA
B.4 mA
C.40 mA
D.0 mA
Answer : C
SSC JE Electrical Important MCQ Part 26
12.For large values of ∣VDS∣, a FET behaves as a
A.voltage-controlled resistor
B.current-controlled current source
C.voltage-controlled current source
D.current-controlled resistor
Answer : C
13.In MOSFET devices, the N-channel type is better than the P-channel type in the following respect
A.It has better noise immunity
B.It is faster
C.It is TTL compatible
D.It has better drive capability
Answer : B
14.In a MOSFET, the polarity of the inversion layer is the same as that of the
A.majority carriers in the drain
B.minority carries in the drain
C.majority carries in the substrate
D.majority carries in the source
Answer : D
SSC JE Electrical Important MCQ Part 26
Details Solution Available In Electrical One Year Test Series Pass
15.A BJT is said to be operating in the saturation region if
A.both the junctions are reverse biased
B.base—emitter junction is reverse biased and base collector junction is forward biase
C.base—emitter junction is forward biased and base—collector junction reverse biased
D.both the junctions are forward biased
Answer : D
SSC JE Electrical Important MCQ Part 26
16.The early-effect in a BJT is caused by
A.fast turn-on
B.fast turn-off
C.large collector—base reverse bias
D.large emitter—base forward bias
Answer : C
17.According to Hall effect, the Hall voltage is proportional to—–(B is the magnetic field and I is the current.)
A.the product of B and I
B.inverse of the product of B and I
C.I only
D.B only
Answer : A
SSC JE Electrical Important MCQ Part 26
18.The unit of q/kT is
A.V
B.V-1
C.J
D.J/K
Answer : B
19.Drift current in semiconductors depends upon
A.only the electric field
B.only the carrier concentration gradient
C.both the electric field and the carrier concentration
D.both the electric field and the carrier concentration gradient
Answer : C
SSC JE Electrical Important MCQ Part 26
20.The diffusion potential across a P—N junction
A.decreases with increasing doping concentration
B.increases with decreasing band gap
C.does not depend on doping concentrations
D.increases with increase in doping concentration
Answer : D
SSC JE Electrical Important MCQ Part 26
