Field Effect Transistors MCQ

Field Effect Transistors MCQ

Q1. A JFET has three terminals, namely …………

cathode, anode, grid
emitter, base, collector
source, gate, drain
none of the above

Answer : 3

Q2. A JFET is similar in operation to …………. valve

diode
pentode
triode
tetrode

Answer : 2

Q3. A JFET is also called …………… transistor

unipolar
bipolar
unijunction
none of the above

Answer : 1

Q4. A JFET is a ………… driven device

current
voltage
both current and voltage
none of the above

Answer : 2

Q5. The gate of a JFET is ………… biased

reverse
forward
reverse as well as forward
none of the above

Answer : 1

Field Effect Transistors MCQ

Q6. The input impedance of a JFET is …………. that of an ordinary transistor

equal to
less than
more than
none of the above

Answer : 3

Q7. In a p-channel JFET, the charge carriers are …………..

electrons
holes
both electrons and holes
none of the above

Answer : 2

Q8. When drain voltage equals the pinch-off-voltage, then drain current …………. with the increase in drain voltage

decreases
increases
remains constant
none of the above

Answer : 3

Q9. If the reverse bias on the gate of a JFET is increased, then width of the conducting channel …………..

is decreased
is increased
remains the same
none of the above

Answer : 1

Q10. A MOSFET has …………… terminals

two
five
four
three

Answer : 4

Field Effect Transistors MCQ

Q11. A MOSFET can be operated with ……………..

negative gate voltage only
positive gate voltage only
positive as well as negative gate voltage
none of the above

Answer : 3

Q12. A JFET has ……….. power gain

small
very high
very small
none of the above

Answer : 2

Q13. The input control parameter of a JFET is ……………

gate voltage
source voltage
drain voltage
gate current

Answer : 1

Q14. A common base configuration of a pnp transistor is analogous to ………… of a JFET

common source configuration
common drain configuration
common gate configuration
none of the above

Answer : 3

Q15. A JFET has high input impedance because …………

it is made of semiconductor material
input is reverse biased
of impurity atoms
none of the above

Answer : 2

Q16. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ………

almost touch each other
have large gap
have moderate gap
none of the above

Answer : 1

Field Effect Transistors MCQ

Q17. In a JFET, IDSS is known as …………..

drain to source current
drain to source current with gate shorted
drain to source current with gate open
none of the above

Answer : 2

Q18. The two important advantages of a JFET are …………..

high input impedance and square-law property
inexpensive and high output impedance
low input impedance and high output impedance
none of the above

Answer : 1

Q19. …………. has the lowest noise-level

triode
ordinary trnsistor
tetrode
JFET

Answer : 4

Q20. A MOSFET is sometimes called ………. JFET

many gate
open gate
insulated gate
shorted gate

Answer : 3

Q21. Which of the following devices has the highest input impedance?

JFET
MOSFET
Crystal diode
ordinary transistor

Answer : 2

Field Effect Transistors MCQ

Q22. A MOSFET uses the electric field of a ………. to control the channel current

capacitor
battery
generator
none of the above

Answer : 1

Q23. The pinch-off voltage in a JFET is analogous to ………. voltage in a vacuum tube

anode
cathode
grid cut off
none of the above

Answer : 3

Q24. This question will be available soon

Q25. In class A operation, the input circuit of a JFET is ………. biased

forward
reverse
not
none of the above

Answer : 2

Q26. If the gate of a JFET is made less negative, the width of the conducting channel……….

remains the same
is decreased
is increased
none of the above

Answer : 3

Field Effect Transistors MCQ

Q27. The pinch-off voltage of a JFET is about ……….

5 V
0.6 V
15 V
25 V

Answer : 1

Q28. The input impedance of a MOSFET is of the order of ………..

Ω
a few hundred Ω
kΩ
several MΩ

Answer : 4

Q29. The gate voltage in a JFET at which drain current becomes zero is called ……….. voltage

saturation
pinch-off
active
cut-off

Answer : 2

Q30. This question will be available soon

Q31. In a FET, there are ……….. pn junctions at the sides

three
four
five
two

Answer : 4

Field Effect Transistors MCQ

Q32. The transconductance of a JFET ranges from ……………..

100 to 500 mA/V
500 to 1000 mA/V
0.5 to 30 mA/V
above 1000 mA/V

Answer : 3

Q33. The source terminal of a JEFT corresponds to ………….. of a vacuum tube

plate
cathode
grid
none of the above

Answer : 2

Q34. The output characteristics of a JFET closely resemble the output characteristics of a ………. valve

pentode
tetrode
triode
diode

Answer : 1

Q35. If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ……….

is increased
is decreased
remains the same
none of the above

Answer : 1

Field Effect Transistors MCQ

Q36. The channel of a JFET is between the …………….

gate and drain
drain and source
gate and source
input and output

Answer : 2

Q37. For VGS = 0 V, the drain current becomes constant when VDS exceeds ………

cut off
VDD
VP
o V

Answer : 3

Q38. A certain JFET data sheet gives  VGS(off) = -4 V. The pinch-off voltage Vp is ……..

+4 V
-4 V
dependent on VGS
data insufficient

Answer : 1

Q39. The constant-current region of a JFET lies between

cut off and saturation
cut off and pinch-off
o and IDSS
pinch-off and breakdown

Answer : 4

Q40. At cut-off, the JFET channel is ……….

at its widest point
completely closed by the depletion region
extremely narrow
reverse baised

Answer : 2

Q41. A MOSFET differs from a JFET mainly because ………………

of power rating
the MOSFET has two gates
the JFET has a pn junction
none of the above

Answer : 3

Field Effect Transistors MCQ

Q42. A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off)  = -5 V. The value of the drain current is …………

20 mA
0 mA
40 mA
10 mA

Answer : 1

Q43. A n-channel D-MOSFET with a positive VGS is operating in …………

the depletion-mode
the enhancement-mode
cut off
saturation

Answer : 2

Q44. A certain p-channel E-MOSFET has VGS(th)  = -2V. If VGS= 0V, the drain current is ……….

0 mA
ID(on)
maximum
IDSS

Answer : 1

Q45. In a common-source JFET amplifier, the output voltage is …………………

180o out of phase with the input
in phase with the input
90o out of phase with the input
taken at the source

Answer : 1

Field Effect Transistors MCQ

Q46. In a certain common-source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is …………

1
11.4
8.75
3.2

Answer : 2

Q47. In a certain CS JFET amplifier,  RD= 1kΩ , RS= 560 Ω , VDD=10V and gm= 4500 μS. If the source resistor is completely bypassed, the voltage gain is …………

450
45
2.52
4.5

Answer : 4

Q48. A certain common-source JFET has a voltage gain of 10. If the source bypass capacitor is removed, ……………….

the voltage gain will increase
the transconductance will increase
the voltage gain will decrease
the Q-point will shift

Answer : 3

Q49. A CS JFET amplifier has a load resistance of 10 kΩ ,  RD= 820Ω . If gm= 5mS and Vin= 500 mV, the output signal voltage is ………..

2.05 V
25 V
0.5 V
1.89 V

Answer : 4

Q50. If load resistance in the above question (Q.49) is removed, the output voltage will …………

increase
decrease
stay the same
be zero

Answer : 1

Field Effect Transistors MCQ

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