ELECTRICAL ENGINEERING IMPORTANT 80 MCQ PDF FOR VIZAG MT EXAM 2017

1. Type
   0 system.
2. Type
   I system.
3. Type
   2 system.
4. Type
   3 system.

1. Good
   stability
2. Slow
   response
3. Good
   accuracy
4. Sufficient
   power handling capacity

1. Root
   locus
2. Bode
   Plot
3. Nyquist
   plot
4. None
   of the above

1. Lead-compensation
2. Lag-compensation
3. Lead-lag
   compensation
4. None
   of the above

1. P
2. PI
3. ID
4. PID

1. Charge
   density
2. Current
   density
3. Magnetic
   intensity
4. All
   of these

1. Dish
   antenna on a space craft
2. Wi-Fi
   antenna
3. Both
   a. and b.
4. None
   of the above

1. Dielectric
   materials
2. Low
   resistivity conducting materials
3. Magnetic
   materials
4. Insulating
   materials

1. Determining
   whether the semiconductor is p or n type
2. Determining
   the carrier concentration
3. Calculating
   the mobility
4. Al
   of the above

1. Semi
   conductivity.
2. Magnetostriction.
3. Curie
   point.
4. Super
   conductivity.

1. 32
   inputs, one output and 5 control signals
2. 32
   outputs, one input and 5 control signals
3. 5
   inputs, one control signal and 32 outputs
4. 5
   inputs 32 control signals and one output

1. 4095
2. 3095
3. 4000
4. 2512

1. Sample
   time is much smaller than hold time.
2. Aperture
   time is the delay between the time that the pulse is applied to the switch
   and the actual time the switch closes.
3. Acquisition
   time is the tin-re it takes for the capacitor to charge from one voltage
   to another voltage.
4. The
   voltage across the hold capacitor changes by 50% during hold time.

1. CMOS
2. TTL
3. DTL
4. ECL

1. 79mA,
   l67V
2. 25mA,
   236V
3. 12.5mA,
   l67V
4. 25mA,
   l20V

1. Lower
   input impedance
2. Higher
   voltage gain –
3. Higher
   input impedance and high voltage gain
4. Higher
   input impedance and low voltage gain

1. less
   than of FET but more than BJT
2. More
   than that of FET and BJT
3. more
   than that of FET but less than BJT
4. less
   than that of FET and BJT

1. 2K
2. 4K
3. l6K
4. 64K

1. 6
2. 10
3. 12
4. 18

1. From
   I/O to memory.
2. From
   memory to I/O.
3. from
   memory to memory.
4. from
   I/O to I/O.

1. Permanent
   magnet
2. Electro
   magnet
3. Temporary
   magnet
4. Any
   of the above

1. Armature
2. Slip
   rings
3. Split
   rings
4. Field
   magnets

1. Yoke
2. Pole
   cores
3. Pole
   shoes
4. All
   of the above

1. Field
   magnet
2. Armature
3. Brushes
4. Yoke

1. Triangular
2. Rectangular
3. Cylindrical
4. Square

1. Ball
   bearings are used at both driving and non driving ends.
2. Ball
   bearings are used at driving end and roller bearings are used at non
   driving end.
3. Roller
   bearings are used at driving end and ball bearings are used at non driving
   end.
4.  Roller
   bearings are used at both driving and non driving ends.

1. Armature
   core
2. Commutator
3. Cooling
   fan
4. All
   of the above

1. Series
   wound generator
2. Shunt
   wound generator
3. Compound
   wound generator
4. All
   of the above

1. Mechanical
   energy into electrical energy
2. Chemical
   energy into electrical energy
3. Electrical
   energy into Mechanical energy
4. Electrical
   energy into chemical energy

1. A
   magnetic field
2. A
   conductor
3. Motion
   of conductor with respect to the field
4. All
   of the above

1. Fleming’s
   right hand rule
2. Fleming’s
   left hand rule
3. All
   of the above

1. Net
   torque
2. Friction
   torque
3. Net
   torque + Friction torque + Torque lost
4. Net
   torque – (Friction torque + Torque lost)

1. Core
   losses
2. Field
   losses
3. Copper
   losses
4. Armature
   losses

1. 0
   to 10
2. 10
   to 20
3. 20
   to 30
4. 30
   to 40

1. Protons
2. Neutrons
3. Protons
   and Neutrons
4. Electrons
   and Protons

1. +ve
   charge
2. –ve
   charge
3. No
   charge
4. None
   of the above

1. volt
2. columb
3. ohm
4. farad

1. 624
   x 10^12
2. 624
   x 10^14
3. 624
   x 10^16
4. 624
   x 10^18

1. Electric
   charge
2. Potential
   difference
3. Resistance
4. All
   of the above

1. Zero
   potential
2. –ve
   potential
3. +ve
   potential
4. None
   of the above

1. Length
2. Diameter
3. Area
   of cross section
4. All
   of the above

1. Resistivity
2. Conductance
3. Resonance
4. None
   of the above

1. 0.96
   ohm
2. 0.48
   ohm
3. 1.82
   ohm
4. 1.44
   ohm

1. Silicon
2. Germanium
3. Carbon
4. All
   of the above

1. increases,
   increase
2. increases,
   decrease
3. remains
   same, increase
4. remains
   same, decrease

1. 1.26
2. 1.36
3. 1.46
4. 1.56

1. 2000
2. 2250
3. 2500
4. 2750

1. V
   = IR1 + IR2 + IR3
2. V
   = I/R1 + I/R2 + I/R3
3. I
   = VR1 + VR2 + VR3
4. I
   = V/R1 + V/R2 + V/R3

1. branch
   currents are additive
2. conductances
   are additive
3. powers
   are additive
4. All
   of the above

1. Zero
2. Finite
3. Infinite
4. None
   of the above

1. Zero
2. Infinite
3. Finite
4. All
   of the above

1. Critical
   temperature
2. Absolute
   temperature
3. Mean
   temperature
4. Crystallization
   temperature

1. Below
   the ground state
2. Midway
   between the ground state and first excited state
3. Above
   first excited state
4. At
   first excited state

1. Diamagnetic
2. Paramagnetic
3. Ferromagnetic
4. Ferromagnetic

1. They
   are diamagnetic in nature
2. They
   have zero resistivity
3. They
   have infinite conductivity
4. All
   of the above

1. Induced
   current
2. Critical
   current
3. Eddy
   current
4. Hall
   current

1. One
   half
2. Equal
   to
3. Twice
4. Thrice

1. 10^-2
   eV
2. 10^-4
   eV
3. 10^-6
   eV
4. 10^-8
   eV

1. London
   penetration length
2. Intrinsic
   coherence length
3. Normal
   electron mean free length
4. Mean
   path length

1. Isotopic
   effect
2. BCS
   theory
3. Meissner
   effect
4. London
   theory

1. Aluminium
2. Zinc
3. Molybdenium
4. Tin