Analog Electronics Part One MCQ

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Attempt Free Analog Electronics Part One MCQ Here. Read The Important Electricity MCQ From Below.

1. Which of the following is (are) diodes?

A. Schottky
B. Varactor
C. Tunnel
D. All of the above

ANS- D. All of the above

2. Which of the following metals is (are) used in the fabrication of Schottky diodes?

A. Molybdenum
B. Platinum
C. Tungsten
D. All of the above

ANS- D. All of the above

3. What are the typical ranges of reverse-bias current levels IS for low-power and high-power Schottky diodes at room temperature?

A. Picoamperes, nanoamperes
B. Nanoamperes, microamperes
C. Microamperes, milliamperes
D. Milliamperes, amperes

ANS- C. Microamperes, milliamperes

4. What is the voltage drop across Schottky diodes?

A. 0 V to 0.2 V
B. 0.7 V to 0.8 V
C. 0.8 V to 1.0 V
D. 1.0 V to 1.5 V

ANS- A. 0 V to 0.2 V

5. What metal(s) is(are) used in the construction of Schottky diodes?

A. Molybdenum
B. Platinum
C. Tungsten
D. Silicon
E. Any of the above

ANS- E. Any of the above

Analog Electronics Part One MCQ

6. For a 50-A unit, the PIV of the Schottky is about _____ compared to 150 V for the p-n junction variety.

A. 25
B 50
C. 75
D. 100

ANS- B 50

7. Schottky diodes are very effective at frequencies approaching _____.

A. 20 GHz
B. 10 MHz
C. 100 MHz
D. 1 MHz

ANS- A. 20 GHz

8. This is an approximate equivalent circuit for the _____ diode.

A. Schottky
B. varicap
C. tunnel

ANS- A. Schottky

9. What is the range of the varying capacitor CT in varactor diodes?

A. 0 pF to 5 pF
B. 2 pF to 100 µF
C. 2 µF to 100 µF
D. 2 pF to 100 pF

ANS- D. 2 pF to 100 pF

10. Which of the following areas is (are) applications of varactor diodes?

A. FM modulators
B. Automatic-frequency control devices
C. Adjustable bandpass filters
D. All of the above

ANS- D. All of the above

Analog Electronics Part One MCQ

11. The tuning diode is a _____-dependent, variable _____.

A. voltage, resistor
B. current, capacitor
C. voltage, capacitor
D. current, inductor

ANS- C. voltage, capacitor

12. This is an equivalent circuit for the _____ diode.

A. Schottky
B. varicap
C. tunnel

ANS- B. varicap

13. The varicap diode has a transition capacitance sensitive to the applied reverse-bias potential that is a maximum at zero volts and decreases _____ with increasing reverse-bias potentials.

A. logarithmically
B. parabolically
C. exponentially

ANS- C. exponentially

14. The majority of power diodes are constructed using _____.

A. molybdenum
B. platinum
C. tungsten
D. silicon

ANS- D. silicon

15. The current capability of power diodes can be increased by placing two or more in series.

A. True
B. False

ANS- B. False

Analog Electronics Part One MCQ

16. The PIV rating of power diodes can be increased by stacking the diodes in series.

A. True
B. False

ANS- A. True

17. Which of the following diodes has a negative-resistance region?

A. Schottky
B. Varactor
C. Tunnel
D. Power

ANS- C. Tunnel

18. Which of the follow in semiconductor materials is (are) used in the manufacturing of tunnel diodes?

A. Germanium
B. Gallium
C. Both germanium and gallium arsenide
D. Silicon

ANS- C. Both germanium and gallium arsenide

19. What is the ratio IP / IV for gallium arsenide?

A. 1:1
B. 5:1
C. 10:1
D. 20:1

ANS- D. 20:1

20. What is the limit of peak current IP in tunnel diodes?

A. A few microamperes to several hundred amperes
B. A few microamperes to several amperes
C. A few microamperes to several milliamperes
D. A few microamperes to several hundred microamperes

ANS- A. A few microamperes to several hundred amperes

21. What is the maximum peak voltage for tunnel diodes?

A. 50 mV
B. 100 mV
C. 250 mV
D. 600 mV

ANS- D. 600 mV

Analog Electronics Part One MCQ

22. In which region is the operating point stable in tunnel diodes?

A. Negative-resistance
B. Positive-resistance
C. Both negative- and positive-resistance
D. Neither negative- nor positive-resistance

ANS- B. Positive-resistance

23. Which of the following diodes is limited to the reverse-bias region in its region of operation?

A. Schottky
B. Tunnel
C. Photodiode
D. Rectifier

ANS- C. Photodiode

24. Schottky diodes have _____.

A. quick response time
B. a lower noise figure
C. both quick response time and a lower noise figure
D. None of the above

ANS-. C. both quick response time and a lower noise figure

25. Schottky diode construction results in a _____ uniform junction region and a _____ level of ruggedness.

A. more, high
B. less, high
C. more, low
D. less, low

ANS- A. more, high

26. In both n-type and p-type silicon materials, the _____ is the majority carrier in a Schottky diode.

A. hole
B. electron
C. proton
C. neutron

ANS- B. electron

Analog Electronics Part One MCQ

27. The barrier at the junction for a Schottky diode is _____ that of the p-n junction device in both the forward-
and reverse-bias regions.

A. the same as
B. more than
C. less than
D. None of the above

ANS- C. less than

28. A Schottky diode has _____ level of current at the same applied bias compared to that of the p-n junction at
both the forward- and reverse-bias regions.

A. a lower
B. a higher
C. the same
D. None of the above

ANS- B. a higher

29. The PIV of Schottky diodes is usually _____ that of a comparable p-n junction unit.

A. 1/2
B. 1/3
C. 1/4
D. 1/5

ANS- B. 1/3

30. Varactor diodes are _____.

A. semiconductor devices
B. voltage-dependent
C. variable capacitors
D. All of the above

ANS- D. All of the above

31. In varactor diodes, as the reverse-bias potential increases, the width of the depletion region _____, which in turn _____ the transition capacitance.

A. increases, increases
B. decreases, reduces
C. increases, reduces
D. decreases, increases

ANS-. C. increases, reduces

Analog Electronics Part One MCQ

32. The normal range of reverse-bias voltage VR for varactor diodes is limited to about _____.

A. 15 V
B. 20 V
C. 25 V
D. 40 V

ANS- B. 20 V

33. In the reverse-bias region of varactor diodes, the resistance RR in parallel with the varying capacitor is _____ and the series resistance RS is _____.

A. very large, very small
B. very large, very large
C. very small, very large
D. very small, very small

ANS- A. very large, very small

34. The majority of power diodes are constructed using silicon because of its higher _____ rating(s).

A. current
B. temperature
C. PIV
D. All of the above

ANS- D. All of the above

35. The current capability of power diodes can be increased by placing two or more of the diodes in _____, and the
PIV rating can be increased by stacking the diodes in _____.

A. parallel, parallel
B. series, parallel
C. parallel, series
D. series, series

ANS- C. parallel, series

Analog Electronics Part One MCQ

36. In the negative-resistance region of tunnel diodes, as the terminal voltage increases, the diode current
_____.

A. remains the same
B. decreases
C. increases
D. is undefined

ANS- B. decreases

37. The p-n junction of a tunnel diode is doped at a level from _____ to _____ times that of a typical semiconductor diode.

A. one, several
B. several, ten
C. more than ten, several hundred
D. one hundred, several thousand

ANS- D. one hundred, several thousand

38. The negative-resistance region of tunnel diodes can be used in the design of _____.

A. oscillators
B. switching networks
C. pulse generators
D. All of the above

ANS- D. All of the above