EE AND ECE IMPORTANT MCQ PDF-Integrated Circuits & Hybrid Parameters 1

Integrated Circuits
Q1. An IC has …………….. size

1. Very large
2. Large
3. Extremely small
4. None of the above

Answer : 3

Q2. ICs are generally made of ………………

1. Silicon
2. Germanium
3. Copper
4. None of the above

Answer : 1

Q3. ……………… ICs are the most commonly used

1. Thin films
2. Monolithic
3. Hybrid
4. None of the above

Answer : 2

Q4. The most popular form of IC package is ……………..

1. DIL
2. Flatpack
3. TO-5
4. None of the above

Answer : 2

Q5. ……………. cannot be fabricated on an IC

1. Transistors
2. Diodes
3. Resistors
4. Large inductors and transformers

Answer : 4

Q6. An audio amplifier is an example of ………………

1. Digital IC
2. Linear IC
3. Both digital and linear IC
4. None of the above

Answer : 2

Q7. The active components in an IC are ………….

1. Resistors
2. Capacitors
3. Transistors and diodes
4. None of the above

Answer : 3

Q8. We use ……………….. ICs in computers

1. Digital
2. Linear
3. Both digital and linear
4. None of the above

Answer : 1

Q9. The SiO2 layer in an IC acts as ………….

1. A resistor
2. An insulating layer
3. Mechanical output
4. None of the above

Answer : 2

Q10. ICs are used in ……………

1. Linear devices only
2. Digital devices only
3. Both linear and digital devices
4. None of the above

Answer : 3

Q11. A transistor takes …………… inductor on a silicon IC chip

1. Less space than
2. More space than
3. Same space as
4. None of the above

Answer : 1

Q12. The most popular types of ICs are …………..

1. Thin-film
2. Hybrid
3. Thick-film
4. Monolithic

Answer : 4

Q13. Digital ICs process …………….

1. Linear signals only
2. Digital signals only
3. Both digital and linear signals
4. None of the above

Answer : 3

Q14. Operational amplifiers use …………..

1. Linear ICs
2. Digital ICs
3. Both linear and digital ICs
4. None of the above

Answer : 2

Q15. Which of the following is most difficult to fabricate in an IC?

1. Diode
2. Transistor
3. FET
4. Capacitor

Answer : 4

Hybrid Parameters 
Q1. Hybrid means ………………

1. Mixed
2. Single
3. Unique
4. None of the above

Answer : 1

Q2. There are …………… h parameters of a transistor

1. Two
2. Four
3. Three
4. None of the above

Answer: 2

Q3. The h parameter approach gives correct results for …………

1. Large signals only
2. Small signals only
3. Both small and large signals
4. None of the above

Answer: 2

Q4. A transistor behaves as a linear device for ………….

1. Small signals only
2. Large signals only
3. Both small and large signals
4. None of the above

Answer : 1

Q5. The parameter hie stands for input impedance in ………..

1. CB arrangement with output shorted
2. CC arrangement with output shorted
3. CE arrangement with output shorted
4. None of the above

Answer : 3

Q6. The dimensions of hie parameter are ………..

1. Mho
2. Ohm
3. Farad
4. None of the above

Answer : 2

Q7. The hfe parameter is called ……………. in CE arrangement with output shorted

1. Voltage gain
2. Current gain
3. Input impedance
4. None of the above

Answer : 2

Q8. If the operating point changes, the h parameters of transistor ………..

1. Also change
2. Do not change
3. May or may not change
4. None of the above

Answer : 1

Q9. The values of h parameter of a transistor in CE arrangement are ……………… arrangement

1. The same as for CB
2. The same as for CC
3. Different from that in CB
4. None of the above

Answer : 3

Q10. In order to determine hfe and hie parameters of a transistor, ………… is an a.c. short-circuited

1. Input
2. Output
3. Input as well as output
4. None of the above

Answer : 2

Q11. If temperature changes, h parameters of a transistor ………….

1. May or may not change
2. Do not change
3. Also change
4. None of the above

Answer : 3

Q12. In CE arrangement, the value of input impedance is approximately equal to …………..

1. Hie
2. Hoe
3. Hre
4. None of the above

Answer : 1
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